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  • Gallium Arsenide (GaAs) Substrates

    Gallium Arsenide (GaAs) Substrates


    Vital Materials can provide up to 6-inch GaAs substrates grown with VGF technology, including semi-insulating GaAs wafers (without doping) and semi-conducting GaAs wafers (Si or Zn doped).

    Market and Application

    GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency.

    The RF devices produced with GaAs substrates are commonly used in wireless communication applications, including wireless networks (WLAN), mobile communication, 4G/5G base stations, satellite communications, and WiFi communications.

    With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingly used for display screens and in AR/VR.
    The conversion efficiency of a high-efficiency solar-cell panel based on GaAs is up to 40%. At present, such solar-cell panels are widely used in unmanned aerial vehicle and solar auto applications.

    GaAs applications cover a large variety of transistors for industry spanning optical fiber communication, wireless networks (WLAN), mobile handsets, blue tooth communications, satellite communications, monolithic microwave integrated circuits (MMIC) for 5G, as well as radio frequency integrated circuits (RFIC).

    With Vital’s extensive experience, we have established a strict quality control system that ensures the substrates achieve superior mechanical properties.
    Item Unit LD Applications Specifications LED Applications Microelectronics Specifications
    Conduct Type
    n-type p-type/n-type
    Crystal Growth Method
    VGF VGF VGF
    Dopant
    Si Zn/Si Undoped
    Diameter inch 2",3",4" and 6" 2",3",4" and 6" 2",3",4" and 6"
    Wafer Orientation*
    (100)±0.1° (100)±0.5° (100)±0.5°
    OF/IF
    US or EJ US or EJ US, EJ or notch
    Carrier Concentration /cm3 (0.4-2.5) ×1018 (0.5-5) ×1019
    (0.4-4)×1018

    Resistivity (at RT) ohm.cm (1.2-9.9) ×10-3 (1.2-9.9)×10-3 >107
    Mobility cm2/v.s >1500 50-120/>1000 >4000
    Etch Pit Density (EPD) /cm2 <500 <5000 <5000
    Laser Marking
    Upon request Upon request Upon request
    Thickness* μm (350-650)±25 (350-650)±25 (350-650)±25
    TTV(P/P) μm ≤5 ≤5 ≤4
    TTV(P/E) μm ≤10 ≤10 ≤10
    Warp μm ≤10 ≤10 ≤10
    Surface

    Side1

    Side2

    Polished

    Polished/Etched

    Polished

    Polished/Etched

    Polished

    Polished/Etched

    Epi-ready
    Yes Yes Yes
    Package
    Cassette or single wafer container Cassette or single wafer container Cassette or single wafer container
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